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| polyfet rf devices SK202 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 10.0 Watts Push - Pull Package Style AK HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 50 Watts Junction to Case Thermal Resistance o 3.40 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 20 V 3.0 A RF CHARACTERISTICS ( SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 10 40 TYP 10.0 WATTS OUTPUT ) MAX UNITS dB % 20:1 TEST CONDITIONS Idq = 0.80 A, Vds = 28.0 V, F = 1,000 MHz Idq = 0.80 A, Vds = 28.0 V, F = 1,000 MHz VSWR Relative Idq = 0.80 A, Vds = 28.0 V, F = 1,000 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback Capacitance Common Source Output Capacitance 1 0.6 2.00 2.80 20.0 1.2 12.0 MIN 65 0.4 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 20.00 mA, Vgs = 0V Vds = 28.0 V, Vgs = 0V Vds = 0V Vgs = 30V Ids = 0.04 A, Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 1.00 A Vgs = 20V, Vds = 10V Vds = 28.0 Vgs = 0V, F = 1 MHz Vds = 28.0 Vgs = 0V, F = 1 MHz Vds = 28.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 03/28/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com SK202 POUT VS PIN GRAPH SK202 POUT VS PIN Freq=1000MHz, VDS=28V, Idq=.4A 100 CAPACITANCE VS VOLTAGE S2A 2 DICE CAPACITANCE Ciss 10 16 14 12 14.00 13.00 12.00 Pout 10 8 6 11.00 10.00 9.00 Coss Efficiency = 40% Gain 4 2 0 0 0.5 1 1.5 2 2.5 PIN IN WATTS 3 3.5 4 8.00 7.00 6.00 5.00 1 Crss 0.1 0 5 10 VDS IN VOLTS 15 20 25 30 IV CURVE S2A 2 DIE IV 3 ID & GM VS VGS 10.00 S2A 2 DIE ID & GM Vs VG 2.5 2 ID IN AMPS Id in amps; Gm in mhos Id 1.5 1.00 1 gM 0.5 0 0 2 vg=2v 4 6 Vg=4v 8 10 12 VDS Vg=6v INVOLTS vg=8v 14 0 16 18 vg=12v 20 0.10 0 2 4 6 8 Vgs in Volts 10 12 14 Zin Zout PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 .XXX +/-.005 inches POLYFET RF DEVICES REVISION 03/28/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com |
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